Computer Science · 2026-11-03

Continuous Kinetic Model of Counterion-Mediated Redox Switching in 14-Bit Molecular Memristors for Analog In-Memory Computing

arXiv:2611.02520v1 Announce Type: new Abstract: Kinetic molecular memristors offer a compelling path toward high-density analog in-memory computing by achieving 14-bit precision, wherein discrete redox transitions and counterion displacements dictate non-volatile conductance across a deterministic energy landscape.

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arXiv:2611.02520v1 Announce Type: new Abstract: Kinetic molecular memristors offer a compelling path toward high-density analog in-memory computing by achieving 14-bit precision, wherein discrete redox transitions and counterion displacements dictate non-volatile conductance across a deterministic energy landscape. However, integrating these nanoscale kinetics into macroscale circuit simulators has remained bottlenecked by derivative discontinuities and solver convergence failures. Here, we present a physics-inspired continuous kinetic model that bridges microscopic molecular transport with scalable circuit architectures.

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Original source: arXiv Computer Science AR ↗

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