NORmal: Architecting 3D Ferroelectric NOR Flash as Main Memory -- From Co-Fabricated BEOL Arrays to 200B-Class Multi-Agent LLMs in a Smartphone

arXiv:2610.40000v1 Announce Type: new Abstract: Smartphone agents increasingly work as teams, in which a large planner directs parallel workers across long sessions. Running such a team on the device requires 200B-class models and contexts that exceed phone DRAM many times over, yet existing tiers treat flash as storage: UFS starves per-token weight streaming, and mobile High-Bandwidth Flash (HBF) needs a redesigned SoC and cannot absorb continuous KV writes. We show that a non-volatile memory can join an unmodified LPDDR6 bus as a plain rank only if its access latency fits the DRAM timing window, a condition no NAND tier meets. We present NORmal, to our knowledge the first main-memory architecture for 3D ferroelectric NOR flash.