FNO-Based Inverse Co-Design of Semiconducting Quantum-Dot Devices

arXiv:2611.06994v1 Announce Type: new Abstract: Gate-defined semiconductor quantum dots are promising building blocks for scalable spin-based quantum processors, however their operational properties depend on several fabrication and control parameters, such as lithographic gate layout and applied voltages. Existing device architectures have been refined through repeated fabrication and experimental testing, producing layouts that support reliable device operation. However, this process does not exhaustively explore the design space, limiting the ability to obtain qubits with targeted properties. We address these challenges by presenting a differentiable inverse co-design framework for electrostatically defined quantum dots that jointly optimises gate voltages and the gate electrode layout.